Method of producing a solid-state image pickup apparatus, solid-state image pickup apparatus, and electronic apparatus

ABSTRACT

A method of producing a solid-state image pickup apparatus, including the steps of: forming a plurality of light-receiving portions on a substrate; forming a plurality of transfer gates to be connected to the plurality of light-receiving portions formed on the substrate; forming an insulation film on the substrate; exposing a base by etching the insulation film so that the etched part of the insulation film between the adjacent transfer gates tapers away; and injecting an impurity into the exposed part using the insulation film that has remained after the etching as a mask to thus form an impurity injection portion.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of producing a solid-stateimage pickup apparatus, a solid-state image pickup apparatus, and anelectronic apparatus, more specifically, to a method of producing asolid-state image pickup apparatus, a solid-state image pickupapparatus, and an electronic apparatus having characteristics in amethod of producing a charge voltage conversion portion that is sharedby a plurality of light-receiving portions and a structure thereof.

2. Description of the Related Art

A large number of CMOS (Complementary Metal Oxide Semiconductor)- andMOS (Metal Oxide Semiconductor)-type solid-state image pickupapparatuses are mounted on a digital camera, a video camera, a copyingmachine, a camera-equipped cellular phone, and the like. The solid-stateimage pickup apparatuses tend to be miniaturized and increased in thenumber of pixels, and an area of a photodiode tends to be on thedecrease. As a result, since a signal charge amount also decreases,there is a need to suppress a leak current in a photodiode, a floatingdiffusion, and a reset transistor to be small to thus suppress noises.

Here, in a solid-state image pickup apparatus that shares a singlefloating diffusion among a plurality of pixels, a light-receivingportion and a transfer gate are first formed in forming a floatingdiffusion. After that, a resist mask is opened by patterning, and animpurity is injected via the opening to thus form a floating diffusionat a position corresponding to the opening (see, for example, JapanesePatent Application Laid-open No. 2007-335905).

SUMMARY OF THE INVENTION

However, in the solid-state image pickup apparatus that shares thefloating diffusion among the plurality of pixels, a positional deviationof the resist mask occurs in forming the floating diffusion. When thepositional deviation occurs, signal detection characteristics vary amongthe pixels sharing the same floating diffusion, thus inducing a problemon deterioration of an image quality. Moreover, a high-electric-fieldarea due to an electric field concentration is caused in an area where aside wall of the transfer gate and the floating diffusion areaintersect, with the result that a white spot due to a leak current iscaused.

In view of the circumstances as described above, there is a need tosuppress variations of signal detection characteristics among pixels andsuppress generation of a white spot due to a leak current.

According to an embodiment of the present invention, there is provided amethod of producing a solid-state image pickup apparatus, including thesteps of: forming a plurality of light-receiving portions on asubstrate; forming a plurality of transfer gates to be connected to theplurality of light-receiving portions formed on the substrate; formingan insulation film on the substrate; exposing a base by etching theinsulation film so that the etched part of the insulation film betweenthe adjacent transfer gates tapers away; and injecting an impurity intothe exposed part using the insulation film that has remained after theetching as a mask to thus form an impurity injection portion.

With such a structure, with an opening that is formed by etching theinsulation film formed on the transfer gates as a mask, an impurityinjection portion is formed in a self-aligning manner between theadjacent transfer gates. Moreover, since the base is exposed in a statewhere the etched part of the insulation film between the adjacenttransfer gates tapers away, the impurity injection portion and thetransfer gates intersect obliquely between the adjacent transfer gates,with the result that an electric field concentration can be relieved.

For forming the taperingly-etched part of the insulation film, the stepof forming the insulation film on the substrate includes applying aninsulation material onto the substrate such that a concave portion isformed by the insulation film between the adjacent transfer gates. Withthis structure, when the insulation film is etched back, etchingproceeds at corner portions of the concave portion, and a taperedconfiguration is thus formed.

Such a concave portion of the insulation film is formed by applying aninsulation material by a spin-coating method or depositing an insulationmaterial by sub atmospheric-chemical vapor deposition.

According to another embodiment of the present invention, there isprovided a solid-state image pickup apparatus including: a plurality oflight-receiving portions formed on a substrate; a plurality of transfergates connected to the plurality of light-receiving portions; and animpurity injection portion provided such that a center portion thereofis formed at a position surrounded by the plurality of transfer gatesand a part thereof extending between the adjacent transfer gates fromthe center portion tapers away. There is also provided an electronicapparatus that uses the solid-state image pickup apparatus.

With this structure, since the impurity injection portion between theadjacent transfer gates tapers away, the impurity injection portion andthe transfer gate intersect obliquely between: the adjacent transfergates, with the result that an electric field concentration can berelieved.

According to the embodiments of the present invention, it is possible toform an impurity injection portion to be a charge voltage conversionportion at an accurate position and reduce a difference incharacteristics of pixels sharing the charge voltage conversion portion.It is also possible to relieve an electric field concentration betweenthe transfer gate and the impurity injection portion and suppressgeneration of a white spot due to a leak current.

These and other objects, features and advantages of the presentinvention will become more apparent in light of the following detaileddescription of best mode embodiments thereof, as illustrated in theaccompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram for explaining an entire structure of a solid-stateimage pickup apparatus constituted of a CMOS image sensor;

FIG. 2 is a circuit diagram showing an example of a circuit structure ofa unit pixel;

FIG. 3 are diagrams for explaining a layout of a pixel portion of asolid-state image pickup apparatus of a comparative example;

FIG. 4 are diagrams for explaining an electric field concentration inthe structure of the comparative example;

FIG. 5 are diagrams for explaining a method of producing a solid-stateimage pickup apparatus according to an embodiment of the presentinvention;

FIG. 6 is a diagram for explaining the method of producing a solid-stateimage pickup apparatus according to the embodiment;

FIG. 7 are diagrams for explaining the method of producing a solid-stateimage pickup apparatus according to the embodiment;

FIG. 8 are diagrams for explaining the method of producing a solid-stateimage pickup apparatus according to the embodiment;

FIG. 9 are diagrams for explaining the method of producing a solid-stateimage pickup apparatus according to the embodiment;

FIG. 10 are diagrams for explaining a solid-state image pickup apparatusaccording to the embodiment; and

FIG. 11 is a block diagram showing a structural example of an imagepickup apparatus as an example of an electronic apparatus according tothe embodiment.

DESCRIPTION OF PREFERRED EMBODIMENTS

Hereinafter, an embodiment of the present invention will be describedwith reference to the drawings. It should be noted that descriptionswill be given in the following order.

1. Entire structure of solid-state image pickup apparatus (structure ofCMOS image sensor and circuit structure of unit pixel)2. Method of producing solid-state image pickup apparatus (productionmethods of comparative example and embodiment of present invention)3. Solid-state image pickup apparatus (structure of pixel portion andline of electric force)4. Electronic apparatus

<1. Entire Structure of Solid-State Image Pickup Apparatus> (Structureof CMOS Image Sensor)

FIG. 1 is a diagram for explaining an entire structure of a solid-stateimage pickup apparatus constituted of a CMOS image sensor. As shown inFIG. 1, a CMOS image sensor 10 includes a pixel array portion 11 formedon a semiconductor substrate (chip) (not shown) and peripheral circuitsprovided on the same semiconductor substrate as the pixel array portion11. As the peripheral circuits of the pixel array portion 11, a verticaldrive circuit 12, column circuits 13 each as a signal processingcircuit, a horizontal drive circuit 14, an output circuit 15, a timinggenerator (TG) 16, and the like are used.

On the pixel array portion 11, unit pixels (hereinafter, may simply bereferred to as “pixels”) 20 including a photoelectric conversion devicefor photoelectrically converting incident visible light into a chargeamount corresponding to a light amount of the visible light are arrangedtwo-dimensionally in a matrix. A specific structure of the unit pixels20 will be described later.

In addition, on the pixel array portion 11, with respect to the matrixalignment of the unit pixels 20, a pixel drive line 17 is formed along alateral direction in the figure (pixel alignment direction in pixel row)for each pixel row, and a vertical signal line 18 is formed along alongitudinal direction in the figure (pixel alignment direction in pixelcolumn) for each pixel column. Although the pixel drive line 17 isillustrated as one line, the number of lines is not limited to one. Oneend of each of the pixel drive lines 17 is connected to an outputterminal corresponding to the corresponding one of the pixel rows of thevertical drive circuit 12.

The vertical drive circuit 12 is constituted of a shift register, anaddress decoder, and the like. Though an illustration of a detailedstructure of the vertical drive circuit 12 will be omitted, the verticaldrive circuit 12 includes a read-out scan system for sequentiallyperforming selective scanning on the pixels 20 to read out signals in arow unit. The vertical drive circuit 12 also includes a sweep-out scansystem for performing, with respect to a read-out row on which read-outscanning is performed by the read-out scan system, sweep-out scanningfor sweeping out (resetting) unnecessary charges from the photoelectricconversion device of the pixels 20 of the read-out row, that is ahead ofthe read-out scanning only by a time corresponding to a shutter speed.

By the sweep-out (reset) of unnecessary charges by the sweep-out scansystem, a so-called electronic shutter operation is carried out. Theelectronic shutter operation used herein refers to an operation ofdiscarding optical charges of the photoelectric conversion device andnewly starting an exposure (starting to store optical charges).

A signal read out by the read-out operation of the read-out scan systemis a signal corresponding to an amount of incident light obtained afterthe read-out operation or the electronic shutter operation performedright before that read-out operation. A period from a read-out timing ofthe previous read-out operation or a sweep-out timing of the previouselectronic shutter operation to a read-out timing of the currentread-out operation becomes a storage time period (exposure time period)of optical charges in the unit pixels 20.

Signals output from the unit pixels 20 of the pixel row selected by thescanning of the vertical drive circuit 12 are supplied to the columncircuits 13 via the respective vertical signal lines 18. The columncircuits 13 receive the signals output from the pixels 20 of theselected row for each of the pixel columns of the pixel array portion 11and performs signal processing such as a CDS (Correlated DoubleSampling) for removing a fixed pattern noise unique to the pixels, asignal amplification, and an AD conversion on the signals.

It should be noted that although the column circuits 13 are arranged tohave a one-on-one relationship with the pixel columns in this case, thestructure is not limited thereto. For example, it is also possible toprovide one column circuit 13 for a plurality of pixel columns (verticalsignal lines 18) so that the column circuit 13 is sharedtime-divisionally among the plurality of pixel columns.

The horizontal drive circuit 14 is constituted of a shift register, anaddress decoder, and the like and sequentially selects the columncircuits 13 by successively outputting horizontal scan pulses. It shouldbe noted that although not shown, a horizontal selection switch isconnected between each output stage of the column circuits 13 and ahorizontal signal line 19. The horizontal scan pulses successivelyoutput from the horizontal drive circuit 14 sequentially turn on thehorizontal selection switches provided at the output stages of thecolumn circuits 13. By sequentially turning on the horizontal selectionswitches in response to the horizontal scan pulses, pixel signalsprocessed by the column circuits 13 for each pixel column aresequentially output to the horizontal signal line 19.

The output circuit 15 performs various types of signal processing on theimage signals sequentially supplied from the column circuits 13 via thehorizontal signal line 19 and outputs the processed signals.Specifically, the signal processing carried out in the output circuit 15may involve only buffering or may involve a black-level adjustment, avariation correction of each column, a signal amplification, colorrelation processing, and the like before the buffering, for example.

The timing generator 16 generates various timing signals and controlsdriving of the vertical drive circuit 12, the column circuits 13, thehorizontal drive circuit 14, and the like based on those various timingsignals.

(Circuit Structure of Unit Pixel)

FIG. 2 is a circuit diagram showing an example of a circuit structure ofthe unit pixel. The unit pixel 20 of this example includes, in additionto the photoelectric conversion device as the light-receiving portionsuch as a photodiode 21, for example, four transistors of a transfertransistor 22, a reset transistor 23, an amplification transistor 24,and a selection transistor 25.

Here, as each of the transistors 22 to 25, an N-channel MOS transistoris used, for example. However, a combination of conductivity types ofthe transfer transistor 22, the reset transistor 23, the amplificationtransistor 24, and the selection transistor 25 in this case is a mereexample, and the combination is not limited thereto.

With respect to the unit pixels 20, as the pixel drive line 17, forexample, three lines of a transfer line 171, a reset line 172, and aselection line 173 are provided in common for all the pixels in the samepixel row. One end of each of the transfer line 171, the reset line 172,and the selection line 173 is connected in a pixel-row unit to acorresponding one of output terminals corresponding to the respectivepixel rows of the vertical drive circuit 12.

An anode of the photodiode 21 is connected to a negative-side powersource to be, for example, grounded, and photoelectrically convertsreceived light into optical charges (photoelectrons in this case) in acharge amount corresponding to a received-light amount. A cathodeelectrode of the photodiode 21 is electrically connected to a gateelectrode of the amplification transistor 24 via the transfer transistor22. A node electrically connected to the gate electrode of theamplification transistor 24 will be referred to as FD (charge voltageconversion portion: Floating Diffusion) portion 26.

The transfer transistor 22 is connected between the cathode electrode ofthe photodiode 21 and the FD portion 26 and is turned on when a transferpulse φ TRF having an active high level (Vdd level) (hereinafter,referred to as “High active”) is imparted to the gate electrode via thetransfer line 171. Accordingly, optical charges photoelectricallyconverted by the photodiode 21 are transferred to the FD portion 26.

The reset transistor 23 has a drain electrode connected to a pixel powersource Vdd and a source electrode connected to the FD portion 26 and isturned on when a High active reset pulse φ RST is imparted to the gateelectrode via the reset line 172. Accordingly, prior to the transfer ofthe signal charges from the photodiode 21 to the FD portion 26, chargesof the FD portion 26 are discarded to the pixel power source Vdd so thatthe FD portion 26 is reset.

The amplification transistor 24 has a gate electrode connected to the FDportion 26 and a drain electrode connected to the pixel power source Vddand outputs a potential of the FD portion 26 reset by the resettransistor 23 as a reset level. Furthermore, the amplificationtransistor 24 outputs a potential of the FD portion 26 to which signalcharges have been transferred by the transfer transistor 22 as a signallevel.

The selection transistor 25 has a drain electrode connected to a sourceof the amplification transistor 24 and a source electrode connected tothe vertical signal line 18, for example, and is turned on when a Highactive selection pulse φ SEL is imparted to a gate via the selectionline 173. Accordingly, a signal output from the amplification transistor24 while the unit pixel 20 is in a selected state is relayed to thevertical signal line 18.

It should be noted that for the selection transistor 25, a circuitstructure in which the selection transistor 25 is connected between thepixel power source Vdd and the drain of the amplification transistor 24is also possible.

Moreover, the unit pixel 20 is not limited to the pixel structureconstituted of the four transistors, and any pixel structure including apixel structure constituted of three transistors having both thefunctions of the amplification transistor 24 and the selectiontransistor 25 may be adopted.

In the solid-state image pickup apparatus of this embodiment, astructure in which a single FD portion 26 is shared by a plurality ofphotodiodes 21 is adopted. Therefore, by accurately positioning the FDportion 26 with respect to the plurality of photodiodes 21, variationsof signals taken in by the plurality of photodiodes 21 can besuppressed.

<2. Method of Producing Solid-State Image Pickup Apparatus)

Next, a method of producing a solid-state image pickup apparatus of thisembodiment will be described. First, prior to describing thisembodiment, a comparative example will be described.

Regarding Comparative Example

FIG. 3 are diagrams for explaining a layout of a pixel portion of asolid-state image pickup apparatus of a comparative example. As shown inFIG. 3A, in the layout, a total of four photodiodes 21 arranged two eachin longitudinal and lateral directions share a single FD portion 26. TheFD portion 26 is provided at a center of the arrangement of the fourphotodiodes 21. Each of the photodiodes 21 is provided with the transfertransistor 22 at a corner portion on the FD portion 26 side. Byimparting transfer pulses to transfer gates 22 g of the FD portion 26,charges obtained by a photoelectric conversion by the photodiodes 21 aretransferred to the FD portion 26.

For producing such a pixel portion, the photodiodes 21, the transfertransistors 22, and the transfer gates 22 g are first formed on asubstrate. After that, a resist is applied onto the substrate which isthen subjected to patterning by an exposure and development, whereby anopening is formed. By injecting an impurity via the opening of theresist, the FD portion 26 is formed at a position corresponding to theopening.

In the example shown in FIG. 3A, the broken line at the centersurrounded by the four transfer gates 22 g indicates the openingposition of the resist, and by injecting an impurity into the opening,the FD portion 26 is formed at the position corresponding to theopening.

However, if the position of the opening of the resist to be a mask isdeviated when forming the FD portion 26 by the impurity injection, theposition of the FD portion 26 formed by the impurity injection is alsodeviated. FIG. 3B is a diagram showing a case where the position of theopening of the resist is deviated. In the figure, the broken line at thecenter surrounded by the four transfer gates 22 g indicates the openingposition of the resist. In this case, the opening of the resist isdeviated in a downward direction in the figure as compared to FIG. 3Ashowing an accurate position. If the opening of the resist is deviatedas described above, the FD portion 26 that is formed by the impurityinjection using the resist as a mask is also deviated.

For example, due to the deviation of the FD portion 26 in the downwarddirection in the figure, a contact length between the upper two transfergates 22 g and, the FD portion 26 and a contact length between the lowertwo transfer gates 22 g and the FD portion 26 differ, with the resultthat charge amounts to be transferred from the photodiodes 21 to the FDportion 26 differ. In other words, variations in characteristics arecaused among the pixels.

FIG. 4 are diagrams for explaining an electric field concentration inthe structure of the comparative example. As shown in FIG. 4, even whenthe FD portion 26 is formed at an accurate position, ahigh-electric-field area (circles in figures) is generated at a boundarybetween each of the transfer gates 22 g and the FD portion 26. This isbecause, as shown in the schematic cross-sectional diagram of thetransfer gate portion shown in FIG. 4B, an electric field concentrationoccurs below a sidewall 22 w due to influences of an electric field ofthe gate from the transfer gate 22 g and an electric field generated ata junction portion of the FD portion 26. Such an electric fieldconcentration causes a leak current and a white-spot defect.

(Method of Producing Solid-State Image Pickup Apparatus According toEmbodiment of Present Invention)

A method of producing a solid-state image pickup apparatus according tothis embodiment solves the above problems. FIGS. 5 to 9 are diagrams forexplaining the method of producing a solid-state image pickup apparatusof this embodiment. Here, FIGS. 5 to 8 are schematic cross-sectionaldiagrams, and FIG. 9 are schematic plan views.

First, as shown in FIG. 5A, photodiodes 21 that convert incident lightinto electrical signals are formed in predetermined areas on a substrateformed of, for example, silicon. Further, transfer gates 22 g oftransfer transistors are formed adjacent to the photodiodes 21. Thetransfer gates 22 g are formed via a gate insulation film. Then, afterforming an LDD (Lightly Doped Drain) (not shown) on the substrate onboth sides of each of the transfer gates 22 g, sidewalls 22 w are formedon both sides of each of the transfer gates 22 g. It should be notedthat in the example shown in FIG. 5A, the transfer gate 22 g connectedto the photodiode 21 and the transfer gate 22 g connected to thephotodiode 21 adjacent to that photodiode 21 are illustrated. Afterthat, a 2-layer insulation film 30 formed of SiO₂ and SiN is formed onthe entire surface of the substrate.

Next, a mask insulation film 31 is formed on the 2-layer insulation film30. In this embodiment, SOG (Spin on Glass) is used for the maskinsulation film 31. The SOG is a film formed by applying SiO₂ by aspin-coating method, and SiO₂ flows from a convex portion of a baseconfiguration to a concave portion due to a liquidity so that theconcave portion is formed to be slightly thicker than the convexportion.

Here, at a portion surrounded by the transfer gates 22 g, a dent 31 a isformed by the mask insulation film 31. FIG. 9A is a schematic plan viewfor explaining a state after the mask insulation film is applied. FIG.9A shows a state where the dent 31 a of the mask insulation film 31 isformed at a center portion surrounded by the transfer gates 22 g.

The four transfer gates 22 g are structured as convex portions, and anarea surrounded by the four transfer gates 22 g is structured as aconcave portion. Each of the four transfer gates 22 g has an obliquestraight-line portion on the center portion side, and the concaveportion surrounded by the four transfer gates 22 g thus becomes arectangular area with the straight-line portions as the four sides.Moreover, of the four transfer gates 22 g, a concave portion is alsoformed between the adjacent transfer gates 22 g arranged in the lateraldirection and the adjacent transfer gates 22 g arranged in thelongitudinal direction. Accordingly, the concave portion has a structureextending in a cross shape with the rectangular area as a center.

When forming the mask insulation film 31, since the rectangular area atthe center surrounded by the four transfer gates 22 g out of the concaveportion is larger than the portions between the two adjacent transfergates 22 g, the dent 31 a of the mask insulation film 31 is formed inthe rectangular area. The A-A cross section of FIG. 9A is shown in FIG.5A, and the B-B cross section of FIG. 9A is shown in FIG. 5B. Asdescribed above, the dent 31 a of the mask insulation film 31 is formedin the rectangular area at the center surrounded by the four transfergates 22 g.

Next, as shown in FIG. 6, a resist R is applied onto the substrate, andan opening is formed at the center portion surrounded by the transfergates 22 g by a photolithography method. The opening is formed to belarger than the dent 31 a of the mask insulation film 31. It should benoted that the resist R does not always need to be formed and only needsto be applied when wishing to reinforce protection upon leaving the maskinsulation film 31 above the photodiodes 21 after etching processing.

Next, the mask insulation film 31 is etched via the resist R.Accordingly, the mask insulation film 31 is etched back, and the base ofthe portion surrounded by the transfer gates 22 g is exposed as shown inFIG. 7A.

FIG. 9B is a schematic plan view showing a state where the maskinsulation film 31 is etched back. Since the dent is formed on the maskinsulation film 31 at the center portion surrounded by the transfergates 22 g as shown in FIG. 9A, when the mask insulation film 31 isetched back in this state, the dent of the mask insulation film 31gradually becomes larger to eventually expose the base. At this time,the base is exposed in a state where, between the adjacent transfergates 22 g arranged in the longitudinal and lateral directions, theetched portions at corner portions of the dent of the mask insulationfilm 31 extend in directions of the respective corner portions whiletapering away.

Here, the C-C cross section of FIG. 9B is shown in FIG. 7A, and the D-Dcross section of FIG. 9B is shown in FIG. 7B. As described above, theetched portions of the mask insulation film 31 at the center surroundedby the four transfer gates 22 g extend while tapering away between theadjacent transfer gates 22 g arranged in the longitudinal and lateraldirections.

The etch back is carried out until the etched portions of the maskinsulation film 31 reach the sidewalls 22 w (2-layer insulation film 30above sidewalls 22 w) of the peripheral transfer gates 22 g. As aresult, the sidewall 22 w portions of the transfer gates 22 g areexposed.

Next, as shown in FIG. 8, an impurity injection is carried out via theetched-back mask insulation film 31 to thus form an FD portion 26 as animpurity injection portion at a portion surrounded by the transfer gates22 g. As described above, the base is exposed by the etch back of themask insulation film 31. At this time, since the sidewall 22 w portionsof the transfer gates 22 g are exposed, an impurity is injected in aself-aligning manner by the sidewall 22 w portions in the impurityinjection. Accordingly, the FD portion 26 is formed at an accurateposition without a positional deviation with respect to the fourtransfer gates 22 g.

Moreover, as shown in FIG. 9B, the etched portions of the maskinsulation film 31 extend while tapering away between the adjacenttransfer gates 22 g arranged in the longitudinal and lateral directionsby the etch back of the mask insulation film 31. Thus, if an impurity isinjected via the mask insulation film 31, the shape of the taperedportions is reflected, with the result that the FD portion 26 formed atthat portion is also tapered. By forming the FD portion 26 in such ashape, an electric field concentration between the FD portion 26 and thetransfer gates 22 g is relieved, the details of which will be describedlater.

After the impurity injection, the mask insulation film 31 is removed bywet etching or the like, and an insulation film is formed thereafter toperform a planarization process. It should be noted that the maskinsulation film 31 may be left unetched, and an insulation film may beformed thereafter to perform the planarization process.

In the production method described above, the example in which the SOGobtained by the spin-coating method using SiO₂ is used as the maskinsulation film 31 has been described. However, other insulationmaterials may be used instead. For example, an insulation material maybe deposited by SA-CVD (Sub Atmospheric-Chemical Vapor Deposition), orother materials such as BPSG (Boron Phosphor Silicate Glass) may be usedas the insulation material. It should be noted that since the dent 31 ais formed between the transfer gates 22 g when forming the maskinsulation film 31, it is desirable to use a material having aliquidity.

Moreover, although this embodiment has described the example in whichthe FD portion 26 is formed at a position surrounded by the fourtransfer gates 22 g arranged two each in the longitudinal and lateraldirections, not all of the four transfer gates 22 g need to be thetransfer gate 22 g. Specifically, with at least one of them as thetransfer gate 22 g, the other three that are not used as the transfergates are dummy patterns having the same shape (convex shape) as thetransfer gate.

Further, this embodiment has exemplified the layout in which the FDportion 26 is formed at a position surrounded by the four transfer gates22 g arranged two each in the longitudinal and lateral directions.However, other layouts (other layouts in which FD portion is shared) arealso applicable.

<3. Solid-State Image Pickup Apparatus> (Structure of Pixel Portion)

FIG. 10 are diagrams for explaining a solid-state image pickup apparatusof this embodiment. FIG. 10A is a schematic plan view showing a mainportion of the solid-state image pickup apparatus of this embodiment,and FIG. 10B is a schematic plan view showing a main portion of asolid-state image pickup apparatus of a comparative example. The figurescenter on the FD portion 26 shared by four unit pixels out of the entirestructure shown in FIG. 1. It should be noted that FIG. 10B is aschematic plan view showing the main portion of the comparative example.

The solid-state image pickup apparatus of this embodiment includes theplurality of photodiodes 21 formed on the substrate, the transfer gates22 g of the transfer transistors 22 connected to the photodiodes 21, andthe FD portion 26 formed at a position surrounded by the plurality ofphotodiodes 21. Of those, the FD portion 26 is formed such that a centerportion thereof is provided at a position surrounded by the fourtransfer gates 22 g arranged two each in the longitudinal and lateraldirections and portions extending from the center portion thereof, thatis, portions extending between the two adjacent transfer gates 22 garranged in the longitudinal and lateral directions taper away.

Here, in the comparative example shown in FIG. 10B, while the FD portion26 is formed at a center of the arrangement of the four transfer gates22 g arranged two each in the longitudinal and lateral directions as inthis embodiment, portions extending between the adjacent transfer gates22 g arranged in the longitudinal and lateral directions are nottapered. In other words, an end portion of the FD portion 26 isorthogonal to an end portion of the adjacent transfer gates 22 g.

(Line of Electric Force)

In the structure of the comparative example as described above, asindicated by the arrows of FIG. 10B, lines of electric forces from thetransfer gates 22 g are concentrated at intersections of the transfergates 22 g and the FD portion 26, and high-electric-field areas are thuscaused at the intersection portions (circles in figure) of the transfergates 22 g and the FD portion 26 below the sidewalls 22 w, thus causinga leak current and a white-spot defect.

On the other hand, when the portions of the FD portion 26 extendingbetween the adjacent transfer gates 22 g arranged in the longitudinaland lateral directions are tapered as in the structure of thisembodiment shown in FIG. 10A, an angle at which the end portion of theFD portion 26 intersects with the end portion of the transfer gates 22 gbecomes oblique. As a result, the end portion of the FD portion 26gradually moves away from the end portions of the transfer gates 22 g(sidewalls) as a distance from the center portion increases.

Therefore, as indicated by the arrows of FIG. 10A, the lines of electricforces extending from the transfer gates 22 g to the FD portion 26 aredispersed, and the number of lines of electric forces extending towardthe high-electric-field areas (circles in figure) below the sidewalls 22w is reduced, which means that a high electric field is relieved.Accordingly, a leak current and a white-spot defect are suppressed.

It should be noted that although the layout in which the FD portion 26is formed at a position surrounded by the four transfer gates 22 garranged two each in the longitudinal and lateral directions has beenexemplified in this embodiment, other layouts (other layouts that shareFD portion) are also applicable.

<4. Electronic Apparatus>

FIG. 11 is a block diagram showing a structural example of an imagepickup apparatus as an example of an electronic apparatus of thisembodiment. As shown in FIG. 11, an image pickup apparatus 90 includesan optical system including a lens group 91, a solid-state image pickupapparatus 92, a DSP circuit 93 as a camera signal processing circuit, aframe memory 94, a display apparatus 95, a recording apparatus 96, anoperation system 97, a power source system 98, and the like. Of those,the DSP circuit 93, the frame memory 94, the display apparatus 95, therecording apparatus 96, the operation system 97, and the power sourcesystem 98 are mutually connected via a bus line 99.

The lens group 91 takes in incident light (image light) from an objectand forms an image on an imaging surface of the solid-state image pickupapparatus 92. The solid-state image pickup apparatus 92 converts anamount of incident light imaged on the imaging surface by the lens group91 into an electrical signal in a pixel unit and outputs the signal as apixel signal. As the solid-state image pickup apparatus 92, thesolid-state image pickup apparatus of this embodiment described above isused.

The display apparatus 95 is constituted of a panel-type displayapparatus such as a liquid crystal display apparatus and an organic EL(Electro-Luminescence) display apparatus and displays a moving image ora still image taken by the solid-state image pickup apparatus 92. Therecording apparatus 96 records the moving image or the still image takenby the solid-state image pickup apparatus 92 in a nonvolatile memory ora recording medium such as a video tape and a DVD (Digital VersatileDisc).

The operation system 97 issues an operation command for variousfunctions provided to the image pickup apparatus 90 based on a useroperation. The power source system 98 variously supplies power asoperational power to the DSP circuit 93, the frame memory 94, thedisplay apparatus 95, the recording apparatus 96, and the operationsystem 97 as appropriate.

Such an image pickup apparatus 90 is applied to a video camera, adigital still camera, and a camera module for mobile equipment such as acellular phone. By using the solid-state image pickup apparatus of thisembodiment described above as the solid-state image pickup apparatus 92,a high-quality image pickup apparatus with suppressed noises can beprovided.

The present application contains subject matter related to thatdisclosed in Japanese Priority Patent Application JP 2009-044975 filedin the Japan Patent Office on Feb. 27, 2009, the entire content of whichis hereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

1. A method of producing a solid-state image pickup apparatus,comprising the steps of: forming a plurality of light-receiving portionson a substrate; forming a plurality of transfer gates to be connected tothe plurality of light-receiving portions formed on the substrate;forming an insulation film on the substrate; exposing a base by etchingthe insulation film so that the etched part of the insulation filmbetween the adjacent transfer gates tapers away; and injecting animpurity into the exposed part using the insulation film that hasremained after the etching as a mask to thus form an impurity injectionportion.
 2. The method of producing a solid-state image pickup apparatusaccording to claim 1, wherein the step of forming the insulation film onthe substrate includes applying an insulation material onto thesubstrate such that a concave portion is formed by the insulation filmbetween the adjacent transfer gates.
 3. The method of producing asolid-state image pickup apparatus according to claim 1, wherein theimpurity injection portion is formed at a center of an arrangement offour light-receiving portions arranged two each in longitudinal andlateral directions.
 4. The method of producing a solid-state imagepickup apparatus according to claim 1, wherein the step of forming theinsulation film on the substrate includes applying an insulationmaterial by a spin-coating method.
 5. The method of producing asolid-state image pickup apparatus according to claim 1, wherein thestep of forming the insulation film on the substrate includes depositingan insulation material by sub atmospheric-chemical vapor deposition. 6.The method of producing a solid-state image pickup apparatus accordingto claim 4, wherein the insulation film is formed of oxide silicon.
 7. Asolid-state image pickup apparatus, comprising: a plurality oflight-receiving portions formed on a substrate; a plurality of transfergates connected to the plurality of light-receiving portions; and animpurity injection portion provided such that a center portion thereofis formed at a position surrounded by the plurality of transfer gatesand a part thereof extending between the adjacent transfer gates fromthe center portion tapers away.
 8. An electronic apparatus, comprising:a solid-state image pickup apparatus to output an electrical signalcorresponding to a received-light amount, the solid-state image pickupapparatus including a plurality of light-receiving portions formed on asubstrate, a plurality of transfer gates connected to the plurality oflight-receiving portions, and an impurity injection portion providedsuch that a center portion thereof is formed at a position surrounded bythe plurality of transfer gates and a part thereof extending between theadjacent transfer gates from the center portion tapers away; and asignal processing apparatus to process the electrical signal output fromthe solid-state image pickup apparatus.